Philip Hofmann

Strong electron-phonon coupling in the sigma band of graphene

Publikation: Bidrag til tidsskrift/Konferencebidrag i tidsskrift /Bidrag til avisTidsskriftartikelForskningpeer review



  • Federico Mazzola, Norwegian Univ Sci & Technol NTNU, Norwegian University of Science & Technology, Dept Phys
  • ,
  • Thomas Frederiksen, Univ Basque Country, University of Basque Country, DIPC, Basque Fdn Sci, Ikerbasque
  • ,
  • Thiagarajan Balasubramanian, MAX-lab
  • ,
  • Philip Hofmann
  • Bo Hellsing, Univ Gothenburg, University of Gothenburg, Dept Phys, Mat & Surface Theory Grp, Ikerbasque, the Basque Foundation for Science
  • ,
  • Justin W. Wells, Norwegian Univ Sci & Technol NTNU, Norwegian University of Science & Technology, Dept Phys

First-principles studies of the electron-phonon coupling in graphene predict a high coupling strength for the sigma band with. values of up to 0.9. Near the top of the s band,. is found to be approximate to 0.7. This value is consistent with the recently observed kinks in the s band dispersion by angle-resolved photoemission. While the photoemission intensity from the s band is strongly influenced by matrix elements due to sublattice interference, these effects differ significantly for data taken in the first and neighboring Brillouin zones. This can be exploited to disentangle the influence of matrix elements and electron-phonon coupling. A rigorous analysis of the experimentally determined complex self-energy using Kramers-Kronig transformations further supports the assignment of the observed kinks to strong electron-phonon coupling and yields a coupling constant of 0.6(1), in excellent agreement with the calculations.

TidsskriftPhysical Review B
Antal sider5
StatusUdgivet - 24 feb. 2017

Se relationer på Aarhus Universitet Citationsformater

ID: 121476938