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Philip Hofmann

Spin-dependent electron-phonon coupling in the valence band of single-layer WS2

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Dokumenter

DOI

  • Nicki Frank Hinsche, Technical University of Denmark
  • ,
  • Arlette S. Ngankeu
  • ,
  • Kevin Guilloy
  • ,
  • Sanjoy K. Mahatha
  • ,
  • Antonija Grubisic Cabo
  • ,
  • Marco Bianchi
  • Maciej Dendzik
  • ,
  • Charlotte E. Sanders
  • ,
  • Jill A. Miwa
  • Harsh Bana, Sincrotrone Trieste & University of Trieste
  • ,
  • Elisabetta Travaglia, Sincrotrone Trieste & University of Trieste
  • ,
  • Paolo Lacovig, Elettra Sincrotrone Trieste SCpA
  • ,
  • Luca Bignardi, Elettra Sincrotrone Trieste SCpA
  • ,
  • Rosanna Larciprete, Istituto dei Sistemi Complessi (ISC-CNR)
  • ,
  • Alessandro Baraldi, Istituto Officina dei Materiali (IOM-CNR)
  • ,
  • Silvano Lizzit, Elettra Sincrotrone Trieste SCpA
  • ,
  • Kristian Sommer Thygesen, Ctr Atom Scale Mat Design, Condensed Matter Phys & Chem Dept, Tech. Univ. of Denmark, Technical University of Denmark
  • ,
  • Philip Hofmann

The absence of inversion symmetry leads to a strong spin-orbit splitting of the upper valence band of semiconducting single-layer transition-metal dichalchogenides such as MoS2 or WS2. This permits a direct comparison of the electron-phonon coupling strength in states that only differ by their spin. Here, the electron-phonon coupling in the valence band maximum of single-layer WS2 is studied by first-principles calculations and angle-resolved photoemission. The coupling strength is found to be drastically different for the two spin-split branches, with calculated values of lambda(K) = 0.0021 and 0.40 for the upper and lower spin-split valence band of the freestanding layer, respectively. This difference is somewhat reduced when including scattering processes involving the Au(111) substrate present in the experiment but it remains significant, in good agreement with the experimental results.

OriginalsprogEngelsk
Artikelnummer121402
TidsskriftPhysical Review B
Vol/bind96
Nummer12
Antal sider5
ISSN2469-9950
DOI
StatusUdgivet - 5 sep. 2017

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