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Philip Hofmann

Simultaneous Conduction and Valence Band Quantization in Ultrashallow High-Density Doping Profiles in Semiconductors

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  • F. Mazzola, Norwegian Univ Sci & Technol, Norwegian University of Science & Technology (NTNU), Dept Phys, Ctr Quantum Spintron
  • ,
  • J. W. Wells, Norwegian Univ Sci & Technol, Norwegian University of Science & Technology (NTNU), Dept Phys, Ctr Quantum Spintron
  • ,
  • A. C. Pakpour-Tabrizi, UCL, University College London, University of London, Dept Elect & Elect Engn
  • ,
  • R. B. Jackman, UCL, University College London, University of London, Dept Elect & Elect Engn
  • ,
  • B. Thiagarajan, MAX-lab
  • ,
  • Ph. Hofmann
  • J. A. Miwa

We demonstrate simultaneous quantization of conduction band (CB) and valence band (VB) states in silicon using ultrashallow, high-density, phosphorus doping profiles (so-called Si:P delta layers). We show that, in addition to the well-known quantization of CB states within the dopant plane, the confinement of VB-derived states between the subsurface P dopant layer and the Si surface gives rise to a simultaneous quantization of VB states in this narrow region. We also show that VB quantization can be explained using a simple particle-in-a-box model, and that the number and energy separation of the quantized VB states depend on the depth of the P dopant layer beneath the Si surface. Since the quantized CB states do not show a strong dependence on the dopant depth (but rather on the dopant density), it is straightforward to exhibit control over the properties of the quantized CB and VB states independently of each other by choosing the dopant density and depth accordingly, thus offering new possibilities for engineering quantum matter.

OriginalsprogEngelsk
Artikelnummer046403
TidsskriftPhysical Review Letters
Vol/bind120
Nummer4
Antal sider5
ISSN0031-9007
DOI
StatusUdgivet - 26 jan. 2018

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