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Philip Hofmann

Epitaxial growth of single-orientation high-quality MoS2 monolayers

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DOI

  • Harsh Bana, Univ Trieste, University of Trieste, Dept Phys
  • ,
  • Elisabetta Travaglia, Univ Trieste, University of Trieste, Dept Phys
  • ,
  • Luca Bignardi, Elettra Sincrotrone Trieste SCpA
  • ,
  • Paolo Lacovig, Elettra Sincrotrone Trieste SCpA
  • ,
  • Charlotte E. Sanders
  • ,
  • Maciej Dendzik
  • ,
  • Matteo Michiardi
  • ,
  • Marco Bianchi
  • Daniel Lizzit, Elettra Sincrotrone Trieste SCpA
  • ,
  • Francesco Presel, Univ Trieste, University of Trieste, Dept Phys
  • ,
  • Dario De Angelis, Univ Trieste, University of Trieste, Dept Phys
  • ,
  • Nicoleta Apostol, Natl Inst Mat Phys, National Institute of Materials Physics - Romania
  • ,
  • Pranab Kumar Das, CNR, Consiglio Nazionale delle Ricerche (CNR), Istituto Officina dei Materiali (IOM-CNR), Lab TASC, IOM
  • ,
  • Jun Fujii, CNR, Consiglio Nazionale delle Ricerche (CNR), Istituto Officina dei Materiali (IOM-CNR), Lab TASC, IOM
  • ,
  • Ivana Vobornik, CNR, Consiglio Nazionale delle Ricerche (CNR), Istituto Officina dei Materiali (IOM-CNR), Lab TASC, IOM
  • ,
  • Rosanna Larciprete, CNR, Consiglio Nazionale delle Ricerche (CNR), Istituto dei Sistemi Complessi (ISC-CNR), Inst Complex Syst
  • ,
  • Alessandro Baraldi, CNR, Consiglio Nazionale delle Ricerche (CNR), Istituto Officina dei Materiali (IOM-CNR), Lab TASC, IOM
  • ,
  • Philip Hofmann
  • Silvano Lizzit, Elettra Sincrotrone Trieste SCpA

We present a study on the growth and characterization of high-quality single-layer MoS2 with a single orientation, i.e. without the presence of mirror domains. This single orientation of the MoS2 layer is established by means of x-ray photoelectron diffraction. The high quality is evidenced by combining scanning tunneling microscopy with x-ray photoelectron spectroscopy measurements. Spin-and angle-resolved photoemission experiments performed on the sample revealed complete spin-polarization of the valence band states near the K and -K points of the Brillouin zone. These findings open up the possibility to exploit the spin and valley degrees of freedom for encoding and processing information in devices that are based on epitaxially grown materials.

OriginalsprogEngelsk
Artikelnummer035012
Tidsskrift2D materials
Vol/bind5
Nummer3
Antal sider9
ISSN2053-1583
DOI
StatusUdgivet - apr. 2018

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