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Philip Hofmann

Electronic Structure of Epitaxial Single-Layer MoS2

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  • Jill A. Miwa
  • Soren Ulstrup
  • Signe G. Sorensen, Aarhus Univ, Aarhus University, Dept Phys & Astron, Interdisciplinary Nanosci Ctr iNANO, Danmark
  • Maciej Dendzik, Aarhus Univ, Aarhus University, Dept Phys & Astron, Interdisciplinary Nanosci Ctr iNANO, Danmark
  • Antonija Grubisic Cabo, Aarhus Univ, Aarhus University, Dept Phys & Astron, Interdisciplinary Nanosci Ctr iNANO, Danmark
  • Marco Bianchi
  • Jeppe Vang Lauritsen
  • Philip Hofmann

The electronic structure of epitaxial single-layer MoS2 on Au(111) is investigated by angle-resolved photoemission spectroscopy. Pristine and potassium-doped layers are studied in order to gain access to the conduction band. The potassium-doped layer is found to have a (1.39 +/- 0.05) eV direct band gap at (K) over bar with the valence band top at (Gamma) over bar having a significantly higher binding energy than at (K) over bar. The moire superstructure of the epitaxial system does not lead to the presence of observable replica bands or minigaps. The degeneracy of the upper valence band at (K) over bar is found to be lifted by the spin-orbit interaction, leading to a splitting of (145 +/- 4) meV. This splitting is anisotropic and in excellent agreement with recent calculations. Finally, it is shown that the potassium doping does not only give rise to a rigid shift of the band structure but also to a distortion, leading to the possibility of band structure engineering in single-layers of transition metal dichalcogenides.

OriginalsprogEngelsk
Artikelnummer046802
TidsskriftPhysical Review Letters
Vol/bind114
Nummer4
Antal sider5
ISSN0031-9007
DOI
StatusUdgivet - 29 jan. 2015

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