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Jill Miwa

In Situ Patterning of Ultrasharp Dopant Profiles in Silicon

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DOI

  • Simon P. Cooil, Aberystwyth Univ, Aberystwyth University, Dept Phys
  • ,
  • Federico Mazzola, Univ St Andrews, University of St Andrews, Sch Med
  • ,
  • Hagen W. Klemm, Max Planck Gesell
  • ,
  • Gina Peschel, Max Planck Gesell
  • ,
  • Yuran R. Niu, Lund Univ, Dept Urol, Lund
  • ,
  • Alexei A. Zakharov, Lund Univ, Dept Urol, Lund
  • ,
  • Michelle Y. Simmons, Univ New S Wales, University of New South Wales, Sch Chem Engn, MERLin Grp
  • ,
  • Thomas Schmidt, Fritz Harber Insitute, Max Planck Gesell
  • ,
  • D. Andrew Evans, Aberystwyth Univ, Aberystwyth University, Dept Phys
  • ,
  • Jill A. Miwa
  • Justin W. Wells, Norwegian Univ Sci & Technol NTNU, Dept Phys, Trondheim

We develop a method for patterning a buried two-dimensional electron gas (2DEG) in silicon using low kinetic energy electron stimulated desorption (LEESD) of a monohydride resist mask. A buried 2DEG forms as a result of placing a dense and narrow profile of phosphorus dopants beneath the silicon surface; a so-called delta-layer. Such 2D dopant profiles have previously been studied theoretically, and by angle-resolved photoemission spectroscopy, and have been shown to host a 2DEG with properties desirable for atomic-scale devices and quantum computation applications. Here we outline a patterning method based on low kinetic energy electron beam lithography, combined with in situ characterization, and demonstrate the formation of patterned features with dopant concentrations sufficient to create localized 2DEG states.

OriginalsprogEngelsk
TidsskriftA C S Nano
Vol/bind11
Nummer2
Sider (fra-til)1683-1688
Antal sider6
ISSN1936-0851
DOI
StatusUdgivet - feb. 2017

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