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Hooman Farkhani

A novel TFET 8T-SRAM cell with improved noise margin and stability

Publikation: Bidrag til bog/antologi/rapport/proceeding › Konferencebidrag i proceedings › Forskning › peer review

DOI

https://doi.org/10.1109/DDECS.2018.00014
Forlagets udgivne version

Seyed Hamid Fani, Ferdowsi University of Mashhad
Ali Peiravi, Ferdowsi University of Mashhad
Hooman Farkhani
Farshad Moradi

Originalsprog	Engelsk
Titel	Proceedings - 21st IEEE International Symposium on Design and Diagnostics of Electronic Circuits and Systems : DDECS 2018
Antal sider	6
Forlag	IEEE
Udgivelsesår	11 jul. 2018
Sider	39-44
ISBN (trykt)	978-1-5386-5755-3
ISBN (Elektronisk)	9781538657546
DOI	https://doi.org/10.1109/DDECS.2018.00014
Status	Udgivet - 11 jul. 2018
Begivenhed	21st IEEE International Symposium on Design and Diagnostics of Electronic Circuits and Systems, DDECS 2018 - Budapest, Ungarn Varighed: 25 apr. 2018 → 27 apr. 2018

Konference

Konference	21st IEEE International Symposium on Design and Diagnostics of Electronic Circuits and Systems, DDECS 2018
Land	Ungarn
By	Budapest
Periode	25/04/2018 → 27/04/2018
Sponsor	Faculty of Information Technology and Bionics of Pazmany Peter Catholic University (PPCU), IEEE Council of Electronic Design Automation, Infobionikai Egyesulet

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