Deep-level transient spectroscopy of low-energy ion-irradiated silicon

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  • Department of Physics and Astronomy
  • Interdisciplinary Nanoscience Center
 During electron-gun deposition of metal layers on semiconductors, the semiconductor is bombarded with low-energy metal ions creating defects in the outermost surface layer. For many years, it has been a puzzle why deep-level transient spectroscopy spectra of the as-deposited, electron-gun evaporated, n-type Schottky diodes are so simple displaying only one peak consisting of the merged E center and single-acceptor divacancy peaks, and no A center and double-acceptor divacancy peaks. With reference to a recent publication, we demonstrate that this is not due to a reduced production of divacancies and A centers in this situation but to the localization of these defects in highly defected regions.
Original languageEnglish
JournalJournal of Applied Physics
Volume105
Issue1
Pages (from-to)014501
ISSN0021-8979
DOIs
Publication statusPublished - 2009

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