Quasi-free-standing single-layer WS2 achieved by intercalation

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    Sanjoy K. Mahatha, Deutsch Elektronen Synchrotron DESY, Deutsches Elektronen-Synchrotron (DESY), Helmholtz Association, Maciej Dendzik, Fritz Haber Inst Max Planck Gesell, Max Planck Society, Fritz Haber Institute of the Max Planck Society, Dept Phys Chem, Charlotte E. Sanders, STFC Rutherford Appleton Lab, STFC Rutherford Appleton Laboratory, Science & Technology Facilities Council (STFC), Cent Laser Facil, Matteo Michiardi,
  • Marco Bianchi
  • Jill A. Miwa
  • Philip Hofmann

Large-area and high-quality single-layer transition metal dichalcogenides can be synthesized by epitaxial growth on single-crystal substrates. An important advantage of this approach is that the interaction between the single layer and the substrate can be strong enough to enforce a single crystalline orientation of the layer. On the other hand, the same interaction can lead to hybridization effects, resulting in the deterioration of the single layer's native properties. This dilemma can potentially be solved by decoupling the single layer from the substrate surface after the growth via intercalation of atoms or molecules. Here we show that such a decoupling can indeed be achieved for single-layer WS2 epitaxially grown on Ag(111) by intercalation of Bi atoms. This process leads to a suppression of the single-layer WS2-Ag substrate interaction, yielding an electronic band structure reminiscent of free-standing single-layer WS2.

Original languageEnglish
Article number124001
JournalPhysical Review Materials
Volume2
Issue number12
Number of pages6
ISSN2475-9953
DOIs
Publication statusPublished - 5 Dec 2018

    Research areas

  • DER-WAALS EPITAXY, GRAPHENE, MOS2, MONOLAYERS, SPIN

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