Impact of a SiGe interfacial layer on the growth of a SiC layer on Si with voids at the interface

Research output: Contribution to journal/Conference contribution in journal/Contribution to newspaperJournal articleResearchpeer-review

Original languageEnglish
JournalThin Solid Films
Volume662
Pages (from-to)103-109
Number of pages7
ISSN0040-6090
DOIs
Publication statusPublished - 30 Sep 2018

    Research areas

  • SiC, Voids, Molecular beam epitaxy, SiGe interfacial layer, CHEMICAL-VAPOR-DEPOSITION, SILICON-CARBIDE, EPITAXIAL-GROWTH, THIN-FILMS, INTERMEDIATE LAYER, STRAIN RELAXATION, BUFFER LAYERS, SUBSTRATE, GE, SI(111)

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ID: 131857988