Short-Circuit Degradation of 10-kV 10-A SiC MOSFET

Publication: Research - peer-reviewJournal article

DOI

  • Emanuel-Petre Eni
    Emanuel-Petre EniAalborg University
  • Szymon Beczkowski
    Szymon BeczkowskiAalborg University
  • Stig Munk-Nielsen
    Stig Munk-NielsenAalborg University
  • Tamas Kerekes
    Tamas KerekesAalborg University
  • Remus Teodorescu
    Remus TeodorescuAalborg University
  • Raghavendra Rao Juluri
  • Brian Julsgaard
  • Edward VanBrunt
    Edward VanBruntCree Co
  • Brett Hull
    Brett HullCree Co
  • Shadi Sabri
    Shadi SabriCree Co
  • David Grider
    David GriderCree Co
  • Christian Uhrenfeldt
    Christian UhrenfeldtDept Energy TechnolAalborg Univ. HospitalAalborg University

The short-circuit behavior of power devices is highly relevant for converter design and fault protection. In this paper, the degradation during short circuit of a 10-kV 10-A 4H-SiC MOSFET is investigated at 6 kV dc-link voltage. The study aims to present the behavior of the device during short-circuit transients as it sustains increasing short-circuit pulses during its lifetime. As the short-circuit pulse length increases, degradation of the device can be observed in periodically performed characterizations. The initial degradation seems to be associated with the channel region, and continuous stressing leads to an overall increase in device on-state resistance at the end of the degradation study. Thermal simulation shows that the surface aluminum metalization reached its melting temperature and the top part of the device reaches temperatures above the rated junction temperature. Scanning electron microscope investigation shows aluminum reconstruction and cavities at the contact interface between the aluminum surface metalization and source contacts.

Original languageEnglish
JournalIeee transactions on power electronics
Volume32
Issue number12
Pages (from-to)9342-9354
Number of pages13
ISSN0885-8993
DOIs
StatePublished - Dec 2017

    Keywords

  • Degradation, high voltage, short circuit, SiC MOSFET, POWER MOSFETS, SILICON-CARBIDE, PERFORMANCE, RELIABILITY, ROBUSTNESS, DEVICES, TECHNOLOGY

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