Short-Circuit Degradation of 10-kV 10-A SiC MOSFET

Research output: Research - peer-reviewJournal article

DOI

  • Emanuel-Petre Eni
    Emanuel-Petre EniAalborg University
  • Szymon Beczkowski
    Szymon BeczkowskiAalborg University
  • Stig Munk-Nielsen
    Stig Munk-NielsenAalborg University
  • Tamas Kerekes
    Tamas KerekesAalborg University
  • Remus Teodorescu
    Remus TeodorescuAalborg University
  • Raghavendra Rao Juluri
    Raghavendra Rao Juluri
  • Brian Julsgaard
  • Edward VanBrunt
    Edward VanBruntCree Co
  • Brett Hull
    Brett HullCree Co
  • Shadi Sabri
    Shadi SabriCree Co
  • David Grider
    David GriderCree Co
  • Christian Uhrenfeldt
    Christian UhrenfeldtDept Energy TechnolAalborg Univ. HospitalAalborg University
Original languageEnglish
JournalIeee transactions on power electronics
Volume32
Issue number12
Pages (from-to)9342-9354
Number of pages13
ISSN0885-8993
DOIs
StatePublished - Dec 2017

    Research areas

  • Degradation, high voltage, short circuit, SiC MOSFET, POWER MOSFETS, SILICON-CARBIDE, PERFORMANCE, RELIABILITY, ROBUSTNESS, DEVICES, TECHNOLOGY

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