Short-Circuit Degradation of 10-kV 10-A SiC MOSFET

Research output: Contribution to journal/Conference contribution in journal/Contribution to newspaperJournal articleResearchpeer-review

    Emanuel-Petre Eni, Aalborg University, Szymon Beczkowski, Aalborg University, Stig Munk-Nielsen, Aalborg University, Tamas Kerekes, Aalborg University, Remus Teodorescu, Aalborg University, Raghavendra Rao Juluri,
  • Brian Julsgaard
  • Edward VanBrunt, Cree Co, Brett Hull, Cree Co, Shadi Sabri, Cree Co, David Grider, Cree Co, Christian Uhrenfeldt, Dept Energy Technol, Aalborg Univ. Hospital, Aalborg University
Original languageEnglish
JournalIEEE Transactions on Power Electronics
Volume32
Issue number12
Pages (from-to)9342-9354
Number of pages13
ISSN0885-8993
DOIs
Publication statusPublished - Dec 2017

    Research areas

  • Degradation, high voltage, short circuit, SiC MOSFET, POWER MOSFETS, SILICON-CARBIDE, PERFORMANCE, RELIABILITY, ROBUSTNESS, DEVICES, TECHNOLOGY

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