Role of In-segregation in anomalously large band-gap bowings of (In,Al,Ga)N

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  • I. Gorczyka, Polish Academy of Sciences, Poland
  • T. Suski, Polish Academy of Sciences, Poland
  • Niels Egede Christensen
  • Axel Svane, Denmark
  • Interdisciplinary Nanoscience Center
  • Department of Physics and Astronomy
  • Teoretisk naturvidenskab

Large bowings of the band gap and its pressure coefficient in In-containing nitride semiconductor alloys are observed. Photoluminescence measurements for InxGa1-xN and InxAl1-xN combined with other experimental data show large scatter of the results. A comparison with ab-initio calculations suggests that this scatter can be ascribed to the formation of In clusters during the sample preparation. The explanation of the observed anomalies taking into account chemical and size effects indicates a specific nature of InN, different from other nitrides and other In-based binary semiconductors.

Original languageEnglish
JournalProceedings of SPIE
Publication statusPublished - 2011

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