Electronic structure of Fe1.08Te bulk crystals and epitaxial FeTe thin films on Bi2Te3

Research output: Research - peer-reviewJournal article

DOI

  • Fabian Arnold
  • Jonas Warmuth
    Jonas WarmuthUniv Hamburg, University of Hamburg, Dept Phys
  • Matteo Michiardi
    Matteo Michiardi
  • Jan Fikacek
    Jan FikacekAcad Sci Czech Republ, Czech Academy of Sciences, Inst Phys
  • Marco Bianchi
  • Jin Hu
    Jin HuTulane Univ, Tulane University, Dept Phys & Engn Phys
  • Zhiqiang Mao
    Zhiqiang MaoTulane Univ, Tulane University, Dept Phys & Engn Phys
  • Jill Miwa
  • Udai Raj Singh
    Udai Raj SinghUniv Hamburg, University of Hamburg, Dept Phys
  • Martin Bremholm
  • Roland Wiesendanger
    Roland WiesendangerUniv Hamburg, University of Hamburg, Dept Phys
  • Jan Honolka
    Jan HonolkaAcad Sci Czech Republ, Czech Academy of Sciences, Inst Phys
  • Tim Wehling
    Tim WehlingUniv Bremen, University of Bremen, Inst Theoret Phys
  • Jens Wiebe
    Jens WiebeUniv Hamburg, University of Hamburg, Dept Phys
  • Philip Hofmann

The electronic structure of thin films of FeTe grown on Bi2Te3 is investigated using angle-resolved photoemission spectroscopy, scanning tunneling microscopy and first principles calculations. As a comparison, data from cleaved bulk Fe1.08Te taken under the same experimental conditions is also presented. Due to the substrate and thin film symmetry, FeTe thin films grow on Bi2Te3 in three domains, rotated by 0 degrees, 120 degrees, and 240 degrees. This results in a superposition of photoemission intensity from the domains, complicating the analysis. However, by combining bulk and thin film data, it is possible to partly disentangle the contributions from three domains. We find a close similarity between thin film and bulk electronic structure and an overall good agreement with first principles calculations, assuming a p-doping shift of 65 meV for the bulk and a renormalization factor of around two. By tracking the change of substrate electronic structure upon film growth, we find indications of an electron transfer from the FeTe film to the substrate. No significant change of the film's electronic structure or doping is observed when alkali atoms are dosed onto the surface. This is ascribed to the film's high density of states at the Fermi energy. This behavior is also supported by the ab initio calculations.

Original languageEnglish
Article number065502
JournalJournal of Physics: Condensed Matter
Volume30
Issue number6
Number of pages10
ISSN0953-8984
DOIs
StatePublished - 14 Feb 2018

    Research areas

  • FeTe, ARPES, STM, HIGH-TEMPERATURE SUPERCONDUCTIVITY, AUGMENTED-WAVE METHOD, ULTRASOFT PSEUDOPOTENTIALS, FESE FILMS, SRTIO3

See relations at Aarhus University Citationformats

ID: 120991757