Electron-phonon coupling and surface Debye temperature of Bi2Te3(111) from helium atom scattering

Publication: Research - peer-reviewJournal article

DOI

  • Anton Tamtogl
    Anton TamtoglGraz University of Technology
  • Patrick Kraus
    Patrick KrausGraz University of Technology
  • Nadav Avidor
    Nadav AvidorCambridge University
  • Martin Bremholm
  • Ellen M. J. Hedegaard
  • Bo B. Iversen
  • Marco Bianchi
  • Philip Hofmann
  • John Ellis
    John EllisCambridge University
  • William Allison
    William AllisonCambridge University
  • Giorgio Benedek
    Giorgio BenedekUniv Basque Country, University of Basque Country
  • Wolfgang E. Ernst
    Wolfgang E. ErnstGraz University of Technology

We have studied the topological insulator Bi2Te3(111) by means of helium atom scattering. The average electron-phonon coupling lambda of Bi2Te3(111) is determined by adapting a recently developed quantum-theoretical derivation of the helium scattering probabilities to the case of degenerate semiconductors. Based on the Debye-Waller attenuation of the elastic diffraction peaks of Bi2Te3(111), measured at surface temperatures between 110 and 355 K, we find lambda to be in the range of 0.04-0.11. This method allows us to extract a correctly averaged. and to address the discrepancy between previous studies. The relatively modest value of. is not surprising even though some individual phonons may provide a larger electron-phonon interaction. Furthermore, the surface Debye temperature of Bi2Te3(111) is determined as Theta(D) = (81 +/- 6) K. The electronic surface corrugation was analyzed based on close-coupling calculations. By using a corrugated Morse potential a peak-to-peak corrugation of 9% of the lattice constant is obtained.

Original languageEnglish
Article number195401
JournalPhysical Review B
Volume95
Issue number19
Number of pages9
ISSN2469-9950
DOIs
StatePublished - 4 May 2017

    Keywords

  • WALLER FACTOR, TOPOLOGICAL INSULATORS, BISMUTH TELLURIDE, GAAS(110) SURFACE, METAL-SURFACES, DIFFRACTION, POTENTIALS, GENERATION, TRANSPORT, DYNAMICS

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