Perpendicular STT_RAM Cell in 8nm Technology Node Using Co1/Ni3(111)||Gr2||Co1/Ni3(111) Structure as Magnetic Tunnel Junction

Publikation: Forskning - peer reviewTidsskriftartikel

DOI

  • Ali Varghani
    Ali VarghaniFerdowsi University of MashhadIran
  • Ali Peiravi
    Ali PeiraviFerdowsi University of MashhadIran
  • Farshad Moradi
OriginalsprogEngelsk
TidsskriftJournal of Magnetism and Magnetic Materials
Vol/bind452
Sider (fra-til)10-16
Antal sider7
ISSN0304-8853
DOI
StatusUdgivet - 2018

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